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作為一個源自國外的技術(shù)，半導(dǎo)體產(chǎn)業(yè)涉及許多英文術(shù)語。加之從業(yè)者很多都有海外經(jīng)歷或習(xí)慣于用英文表達相關(guān)技術(shù)和工藝節(jié)點，這就導(dǎo)致許多英文術(shù)語翻譯成中文后，仍有不少人照應(yīng)不上或不知如何翻譯。為此，我們整理了一些常用的半導(dǎo)體術(shù)語的中英文對照表，希望對大家有所幫助。如有出錯之處，請不吝指正。
常用半導(dǎo)體中英對照表離子注入機 ion implanterLSS理論 Lindhand Scharff and Schiott theory，又稱“林漢德-斯卡夫-斯高特理論”。
溝道效應(yīng) channeling effect射程分布 range distribution深度分布 depth distribution投影射程 projected range阻止距離 stopping distance阻止本領(lǐng) stopping power標(biāo)準(zhǔn)阻止截面 standard stopping cross section
退火 annealing激活能 activation energy等溫退火 isothermal annealing激光退火 laser annealing應(yīng)力感生缺陷 stress-induced defect擇優(yōu)取向 preferred orientation制版工藝 mask-making technology
圖形畸變 pattern distortion初縮 first minification精縮 final minification母版 master mask鉻版 chromium plate干版 dry plate乳膠版 emulsion plate透明版 see-through plate高分辨率版 high resolution plate, HRP超微粒干版 plate for ultra-microminiaturization掩模 mask掩模對準(zhǔn) mask alignment對準(zhǔn)精度 alignment precision光刻膠 photoresist，又稱“光致抗蝕劑”。負(fù)性光刻膠 negative photoresist正性光刻膠 positive photoresist無機光刻膠 inorganic resist多層光刻膠 multilevel resist電子束光刻膠 electron beam resist
X射線光刻膠 X-ray resist刷洗 scrubbing甩膠 spinning涂膠 photoresist coating后烘 postbaking光刻 photolithographyX射線光刻 X-ray lithography電子束光刻 electron beam lithography
離子束光刻 ion beam lithography深紫外光刻 deep-UV lithography光刻機 mask aligner投影光刻機 projection mask aligner曝光 exposure
接觸式曝光法 contact exposure method接近式曝光法 proximity exposure method光學(xué)投影曝光法 optical projection exposure method電子束曝光系統(tǒng) electron beam exposure system分步重復(fù)系統(tǒng) step-and-repeat system
顯影 development線寬 linewidth去膠 stripping of photoresist氧化去膠 removing of photoresist by oxidation等離子［體］去膠 removing of photoresist by plasma
刻蝕 etching干法刻蝕 dry etching反應(yīng)離子刻蝕 reactive ion etching, RIE各向同性刻蝕 isotropic etching各向異性刻蝕 anisotropic etching反應(yīng)濺射刻蝕 reactive sputter etching離子銑 ion beam milling，又稱“離子磨削”。等離子［體］刻蝕 plasma etching
鉆蝕 undercutting剝離技術(shù) lift-off technology，又稱“浮脫工藝”。終點監(jiān)測 endpoint monitoring金屬化 metallization互連 interconnection多層金屬化 multilevel metallization
電遷徙 electromigration回流 reflow磷硅玻璃 phosphorosilicate glass硼磷硅玻璃 boron-phosphorosilicate glass鈍化工藝 passivation technology多層介質(zhì)鈍化 multilayer dielectric passivation
劃片 scribing電子束切片 electron beam slicing燒結(jié) sintering印壓 indentation熱壓焊 thermocompression bonding熱超聲焊 thermosonic bonding
冷焊 cold welding點焊 spot welding球焊 ball bonding楔焊 wedge bonding內(nèi)引線焊接 inner lead bonding外引線焊接 outer lead bonding
梁式引線 beam lead裝架工藝 mounting technology附著 adhesion封裝 packaging金屬封裝 metallic packaging陶瓷封裝 ceramic packaging
扁平封裝 flat packaging塑封 plastic package玻璃封裝 glass packaging微封裝 micropackaging，又稱“微組裝”。
管殼 package管芯 die引線鍵合 lead bonding引線框式鍵合 lead frame bonding帶式自動鍵合 tape automated bonding, TAB
激光鍵合 laser bonding超聲鍵合 ultrasonic bonding紅外鍵合 infrared bonding
EDA365電子論壇微電子辭典大集合（按首字母順序排序）AAbrupt junction 突變結(jié)Accelerated testing 加速實驗Acceptor 受主Acceptor atom 受主原子Accumulation 積累、堆積Accumulating contact 積累接觸Accumulation region 積累區(qū)Accumulation layer 積累層Active region 有源區(qū)Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）區(qū)Admittance 導(dǎo)納Allowed band 允帶Alloy-junction device合金結(jié)器件Aluminum(Aluminium) 鋁Aluminum – oxide 鋁氧化物Aluminum passivation 鋁鈍化Ambipolar 雙極的Ambient temperature 環(huán)境溫度Amorphous 無定形的，非晶體的Amplifier 功放 擴音器 放大器Analogue(Analog) comparator 模擬比較器Angstrom 埃Anneal 退火Anisotropic 各向異性的Anode 陽極Arsenic (AS) 砷Auger 俄歇Auger process 俄歇過程Avalanche 雪崩Avalanche breakdown 雪崩擊穿Avalanche excitation雪崩激發(fā)BBackground carrier 本底載流子Background doping 本底摻雜Backward 反向Backward bias 反向偏置Ballasting resistor 整流電阻Ball bond 球形鍵合Band 能帶Band gap 能帶間隙Barrier 勢壘Barrier layer 勢壘層Barrier width 勢壘寬度base 基極base contact 基區(qū)接觸base stretching 基區(qū)擴展效應(yīng)base transit time 基區(qū)渡越時間base transport efficiency基區(qū)輸運系數(shù)base-width modulation基區(qū)寬度調(diào)制Basis vector 基矢Bias 偏置Bilateral switch 雙向開關(guān)Binary code 二進制代碼Binary compound semiconductor 二元化合物半導(dǎo)體Bipolar 雙極性的Bipolar Junction Transistor (BJT)雙極晶體管Bloch 布洛赫Blocking band 阻擋能帶Blocking contact 阻擋接觸Body - centered 體心立方Body-centred cubic structure 體立心結(jié)構(gòu)Boltzmann 波爾茲曼Bond 鍵、鍵合Bonding electron 價電子Bonding pad 鍵合點Bootstrap circuit 自舉電路Bootstrapped emitter follower 自舉射極跟隨器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 邊界條件Bound electron 束縛電子Breadboard 模擬板、實驗板Break down 擊穿Break over 轉(zhuǎn)折Brillouin 布里淵Brillouin zone 布里淵區(qū)Built-in 內(nèi)建的Build-in electric field 內(nèi)建電場Bulk 體/體內(nèi)Bulk absorption 體吸收Bulk generation 體產(chǎn)生Bulk recombination 體復(fù)合Burn - in 老化Burn out 燒毀Buried channel 埋溝Buried diffusion region 隱埋擴散區(qū)CCan 外殼Capacitance 電容Capture cross section 俘獲截面Capture carrier 俘獲載流子Carrier 載流子、載波Carry bit 進位位Carry-in bit 進位輸入Carry-out bit 進位輸出Cascade 級聯(lián)Case 管殼Cathode 陰極Center 中心Ceramic 陶瓷（的）Channel 溝道Channel breakdown 溝道擊穿Channel current 溝道電流Channel doping 溝道摻雜Channel shortening 溝道縮短Channel width 溝道寬度Characteristic impedance 特征阻抗Charge 電荷、充電Charge-compensation effects 電荷補償效應(yīng)Charge conservation 電荷守恒Charge neutrality condition 電中性條件Charge drive/exchange/sharing/transfer/storage 電荷驅(qū)動/交換/共享/轉(zhuǎn)移/存儲Chemmical etching 化學(xué)腐蝕法Chemically-Polish 化學(xué)拋光Chemmically-Mechanically Polish (CMP) 化學(xué)機械拋光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二極管Cleavage plane 解理面Clock rate 時鐘頻率Clock generator 時鐘發(fā)生器Clock flip-flop 時鐘觸發(fā)器Close-packed structure 密堆積結(jié)構(gòu)Close-loop gain 閉環(huán)增益Collector 集電極Collision 碰撞Compensated OP-AMP 補償運放Common-base/collector/emitter connection 共基極/集電極/發(fā)射極連接Common-gate/drain/source connection 共柵/漏/源連接Common-mode gain 共模增益Common-mode input 共模輸入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 補償Compensated impurities 補償雜質(zhì)Compensated semiconductor 補償半導(dǎo)體Complementary Darlington circuit 互補達林頓電路Complementary metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互補金屬氧化物半導(dǎo)體場效應(yīng)晶體管Complementary error function 余誤差函數(shù)Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 計算機輔助設(shè)計/ 測試 /制造Compound Semiconductor 化合物半導(dǎo)體Conductance 電導(dǎo)Conduction band (edge) 導(dǎo)帶(底)Conduction level/state 導(dǎo)帶態(tài)Conductor 導(dǎo)體Conductivity 電導(dǎo)率Configuration 組態(tài)Conlomb 庫侖Conpled Configuration Devices 結(jié)構(gòu)組態(tài)Constants 物理常數(shù)Constant energy surface 等能面Constant-source diffusion恒定源擴散Contact 接觸Contamination 治污Continuity equation 連續(xù)性方程Contact hole 接觸孔Contact potential 接觸電勢Continuity condition 連續(xù)性條件Contra doping 反摻雜Controlled 受控的Converter 轉(zhuǎn)換器Conveyer 傳輸器Copper interconnection system 銅互連系統(tǒng)Couping 耦合Covalent 共階的Crossover 跨交Critical 臨界的Crossunder 穿交Crucible坩堝Crystal defect/face/orientation/lattice 晶體缺陷/晶面/晶向/晶格Current density 電流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 電流漂移/驅(qū)動/共享Current Sense 電流取樣Curvature 彎曲Custom integrated circuit 定制集成電路Cylindrical 柱面的Czochralshicrystal 直立單晶Czochralski technique 切克勞斯基技術(shù)（Cz法直拉晶體J）DDangling bonds 懸掛鍵Dark current 暗電流Dead time 空載時間Debye length 德拜長度De.broglie 德布洛意Decderate 減速Decibel (dB) 分貝Decode 譯碼Deep acceptor level 深受主能級Deep donor level 深施主能級Deep impurity level 深度雜質(zhì)能級Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 簡并半導(dǎo)體Degeneracy 簡并度Degradation 退化Degree Celsius(centigrade) /Kelvin 攝氏/開氏溫度Delay 延遲 Density 密度Density of states 態(tài)密度Depletion 耗盡Depletion approximation 耗盡近似Depletion contact 耗盡接觸Depletion depth 耗盡深度Depletion effect 耗盡效應(yīng)Depletion layer 耗盡層Depletion MOS 耗盡MOSDepletion region 耗盡區(qū)Deposited film 淀積薄膜Deposition process 淀積工藝Design rules 設(shè)計規(guī)則Die 芯片（復(fù)數(shù)dice）Diode 二極管Dielectric 介電的Dielectric isolation 介質(zhì)隔離Difference-mode input 差模輸入Differential amplifier 差分放大器Differential capacitance 微分電容Diffused junction 擴散結(jié)Diffusion 擴散Diffusion coefficient 擴散系數(shù)Diffusion constant 擴散常數(shù)Diffusivity 擴散率Diffusion capacitance/barrier/current/furnace 擴散電容/勢壘/電流/爐Digital circuit 數(shù)字電路Dipole domain 偶極疇Dipole layer 偶極層Direct-coupling 直接耦合Direct-gap semiconductor 直接帶隙半導(dǎo)體Direct transition 直接躍遷Discharge 放電Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布電容Distributed model 分布模型Displacement 位移Dislocation 位錯Domain 疇 Donor 施主Donor exhaustion 施主耗盡Dopant 摻雜劑Doped semiconductor 摻雜半導(dǎo)體Doping concentration 摻雜濃度Double-diffusive MOS(DMOS)雙擴散MOS.Drift 漂移Drift field 漂移電場Drift mobility 遷移率Dry etching 干法腐蝕Dry/wet oxidation 干/濕法氧化Dose 劑量Duty cycle 工作周期Dual-in-line package （DIP） 雙列直插式封裝Dynamics 動態(tài)Dynamic characteristics 動態(tài)屬性Dynamic impedance 動態(tài)阻抗EEarly effect 厄利效應(yīng)Early failure 早期失效Effective mass 有效質(zhì)量Einstein relation(ship) 愛因斯坦關(guān)系Electric Erase Programmable Read only Memory(E2PROM) 一次性電可擦除只讀存儲器Electrode 電極Electrominggratim 電遷移Electron affinity 電子親和勢Electronic -grade 電子能Electron-beam photo-resist exposure 光致抗蝕劑的電子束曝光Electron gas 電子氣Electron-grade water 電子級純水Electron trapping center 電子俘獲中心Electron Volt (eV) 電子伏Electrostatic 靜電的Element 元素/元件/配件Elemental semiconductor 元素半導(dǎo)體Ellipse 橢圓Ellipsoid 橢球Emitter 發(fā)射極Emitter-coupled logic 發(fā)射極耦合邏輯Emitter-coupled pair 發(fā)射極耦合對Emitter follower 射隨器Empty band 空帶Emitter crowding effect 發(fā)射極集邊（擁擠）效應(yīng)Endurance test =life test 壽命測試Energy state 能態(tài)Energy momentum diagram 能量-動量(E-K)圖Enhancement mode 增強型模式Enhancement MOS 增強性MOS Entefic (低)共溶的Environmental test 環(huán)境測試Epitaxial 外延的Epitaxial layer 外延層Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效電路Equilibrium majority /minority carriers 平衡多數(shù)/少數(shù)載流子Erasable Programmable ROM (EPROM)可搽?。ň幊蹋┐鎯ζ?/p>Error function complement 余誤差函數(shù)Etch 刻蝕Etchant 刻蝕劑Etching mask 抗蝕劑掩模Excess carrier 過剩載流子Excitation energy 激發(fā)能Excited state 激發(fā)態(tài)Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 雜質(zhì)半導(dǎo)體FFace - centered 面心立方Fall time 下降時間Fan-in 扇入Fan-out 扇出Fast recovery 快恢復(fù)Fast surface states 快界面態(tài)Feedback 反饋Fermi level 費米能級Fermi-Dirac Distribution 費米-狄拉克分布Femi potential 費米勢Fick equation 菲克方程（擴散）Field effect transistor 場效應(yīng)晶體管Field oxide 場氧化層Filled band 滿帶Film 薄膜Flash memory 閃爍存儲器Flat band 平帶Flat pack 扁平封裝Flicker noise 閃爍（變）噪聲Flip-flop toggle 觸發(fā)器翻轉(zhuǎn)Floating gate 浮柵Fluoride etch 氟化氫刻蝕Forbidden band 禁帶Forward bias 正向偏置Forward blocking /conducting正向阻斷/導(dǎo)通Frequency deviation noise頻率漂移噪聲Frequency response 頻率響應(yīng)Function 函數(shù)GGain 增益Gallium-Arsenide(GaAs) 砷化鉀Gamy ray r 射線Gate 門、柵、控制極Gate oxide 柵氧化層Gauss（ian） 高斯Gaussian distribution profile 高斯摻雜分布Generation-recombination 產(chǎn)生-復(fù)合Geometries 幾何尺寸Germanium(Ge) 鍺Graded 緩變的Graded (gradual) channel 緩變溝道Graded junction 緩變結(jié)Grain 晶粒Gradient 梯度Grown junction 生長結(jié)Guard ring 保護環(huán)Gummel-Poom model 葛謀-潘 模型Gunn - effect 狄氏效應(yīng)HHardened device 輻射加固器件Heat of formation 形成熱Heat sink 散熱器、熱沉Heavy/light hole band 重/輕 空穴帶Heavy saturation 重?fù)诫sHell - effect 霍爾效應(yīng)Heterojunction 異質(zhì)結(jié)Heterojunction structure 異質(zhì)結(jié)結(jié)構(gòu)Heterojunction Bipolar Transistor（HBT）異質(zhì)結(jié)雙極型晶體High field property 高場特性High-performance MOS.( H-MOS)高性能MOS. Hormalized 歸一化Horizontal epitaxial reactor 臥式外延反應(yīng)器Hot carrior 熱載流子Hybrid integration 混合集成IImage - force 鏡象力Impact ionization 碰撞電離Impedance 阻抗Imperfect structure 不完整結(jié)構(gòu)Implantation dose 注入劑量Implanted ion 注入離子Impurity 雜質(zhì)Impurity scattering 雜志散射Incremental resistance 電阻增量（微分電阻）In-contact mask 接觸式掩模Indium tin oxide (ITO) 銦錫氧化物Induced channel 感應(yīng)溝道Infrared 紅外的Injection 注入Input offset voltage 輸入失調(diào)電壓Insulator 絕緣體Insulated Gate FET(IGFET)絕緣柵FETIntegrated injection logic集成注入邏輯Integration 集成、積分Interconnection 互連Interconnection time delay 互連延時Interdigitated structure 交互式結(jié)構(gòu)Interface 界面Interference 干涉International system of unions國際單位制Internally scattering 谷間散射Interpolation 內(nèi)插法Intrinsic 本征的Intrinsic semiconductor 本征半導(dǎo)體Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 離子Ion beam 離子束Ion etching 離子刻蝕Ion implantation 離子注入Ionization 電離Ionization energy 電離能Irradiation 輻照Isolation land 隔離島Isotropic 各向同性JJunction FET(JFET) 結(jié)型場效應(yīng)管Junction isolation 結(jié)隔離Junction spacing 結(jié)間距Junction side-wall 結(jié)側(cè)壁LLatch up 閉鎖Lateral 橫向的Lattice 晶格Layout 版圖Lattice binding/cell/constant/defect/distortion 晶格結(jié)合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸變Leakage current （泄）漏電流Level shifting 電平移動Life time 壽命linearity 線性度linked bond 共價鍵Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生長技術(shù)Lithography 光刻Light Emitting Diode(LED) 發(fā)光二極管Load line or Variable 負(fù)載線Locating and Wiring 布局布線Longitudinal 縱向的Logic swing 邏輯擺幅Lorentz 洛淪茲Lumped model 集總模型MMajority carrier 多數(shù)載流子Mask 掩膜板，光刻板Mask level 掩模序號Mask set 掩模組Mass - action law質(zhì)量守恒定律Master-slave D flip-flop主從D觸發(fā)器Matching 匹配Maxwell 麥克斯韋Mean free path 平均自由程Meandered emitter junction梳狀發(fā)射極結(jié)Mean time before failure (MTBF) 平均工作時間Megeto - resistance 磁阻Mesa 臺面MESFET-metal Semiconductor金屬半導(dǎo)體FETmetallization 金屬化Microelectronic technique 微電子技術(shù)Microelectronics 微電子學(xué)Millen indices 密勒指數(shù)Minority carrier 少數(shù)載流子Misfit 失配Mismatching 失配Mobile ions 可動離子Mobility 遷移率Module 模塊Modulate 調(diào)制Molecular crystal分子晶體Monolithic IC 單片ICMOSFET金屬氧化物半導(dǎo)體場效應(yīng)晶體管Mos. Transistor(MOST )MOS. 晶體管Multiplication 倍增Modulator 調(diào)制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模塊Multiplication coefficient倍增因子NNaked chip 未封裝的芯片（裸片）Negative feedback 負(fù)反饋Negative resistance 負(fù)阻Nesting 套刻Negative-temperature-coefficient 負(fù)溫度系數(shù)Noise margin 噪聲容限Nonequilibrium 非平衡Nonrolatile 非揮發(fā)（易失）性Normally off/on 常閉/開Numerical analysis 數(shù)值分析OOccupied band 滿帶Officienay 功率Offset 偏移、失調(diào)On standby 待命狀態(tài)Ohmic contact 歐姆接觸Open circuit 開路Operating point 工作點Operating bias 工作偏置Operational amplifier (OPAMP)運算放大器Optical photon =photon 光子Optical quenching光猝滅Optical transition 光躍遷Optical-coupled isolator光耦合隔離器Organic semiconductor有機半導(dǎo)體Orientation 晶向、定向Outline 外形Out-of-contact mask非接觸式掩模Output characteristic 輸出特性Output voltage swing 輸出電壓擺幅Overcompensation 過補償Over-current protection 過流保護Over shoot 過沖Over-voltage protection 過壓保護Overlap 交迭Overload 過載Oscillator 振蕩器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化層鈍化PPackage 封裝Pad 壓焊點Parameter 參數(shù)Parasitic effect 寄生效應(yīng)Parasitic oscillation 寄生振蕩Passination 鈍化Passive component 無源元件Passive device 無源器件Passive surface 鈍化界面Parasitic transistor 寄生晶體管Peak-point voltage 峰點電壓Peak voltage 峰值電壓Permanent-storage circuit 永久存儲電路Period 周期Periodic table 周期表Permeable - base 可滲透基區(qū)Phase-lock loop 鎖相環(huán)Phase drift 相移Phonon spectra 聲子譜Photo conduction 光電導(dǎo)Photo diode 光電二極管Photoelectric cell 光電池Photoelectric effect 光電效應(yīng)Photoenic devices 光子器件Photolithographic process 光刻工藝(photo) resist （光敏）抗腐蝕劑Pin 管腳Pinch off 夾斷Pinning of Fermi level 費米能級的釘扎（效應(yīng)）Planar process 平面工藝Planar transistor 平面晶體管Plasma 等離子體Plezoelectric effect 壓電效應(yīng)Poisson equation 泊松方程Point contact 點接觸Polarity 極性Polycrystal 多晶Polymer semiconductor聚合物半導(dǎo)體Poly-silicon 多晶硅Potential (電)勢Potential barrier 勢壘Potential well 勢阱Power dissipation 功耗Power transistor 功率晶體管Preamplifier 前置放大器Primary flat 主平面Principal axes 主軸Print-circuit board(PCB) 印制電路板Probability 幾率Probe 探針Process 工藝Propagation delay 傳輸延時Pseudopotential method 膺勢發(fā)Punch through 穿通Pulse triggering/modulating 脈沖觸發(fā)/調(diào)制Pulse Widen Modulator(PWM) 脈沖寬度調(diào)制Punchthrough 穿通Push-pull stage 推挽級QQuality factor 品質(zhì)因子Quantization 量子化Quantum 量子Quantum efficiency量子效應(yīng)Quantum mechanics 量子力學(xué)Quasi – Fermi－level準(zhǔn)費米能級Quartz 石英RRadiation conductivity 輻射電導(dǎo)率Radiation damage 輻射損傷Radiation flux density 輻射通量密度Radiation hardening 輻射加固Radiation protection 輻射保護Radiative - recombination輻照復(fù)合Radioactive 放射性Reach through 穿通Reactive sputtering source 反應(yīng)濺射源Read diode 里德二極管Recombination 復(fù)合Recovery diode 恢復(fù)二極管Reciprocal lattice 倒核子Recovery time 恢復(fù)時間Rectifier 整流器（管）Rectifying contact 整流接觸Reference 基準(zhǔn)點 基準(zhǔn) 參考點Refractive index 折射率Register 寄存器Registration 對準(zhǔn)Regulate 控制 調(diào)整Relaxation lifetime 馳豫時間Reliability 可靠性Resonance 諧振Resistance 電阻Resistor 電阻器Resistivity 電阻率Regulator 穩(wěn)壓管（器）Relaxation 馳豫Resonant frequency共射頻率Response time 響應(yīng)時間Reverse 反向的Reverse bias 反向偏置SSampling circuit 取樣電路Sapphire 藍(lán)寶石（Al2O3）Satellite valley 衛(wèi)星谷Saturated current range電流飽和區(qū)Saturation region 飽和區(qū)Saturation 飽和的Scaled down 按比例縮小Scattering 散射Schockley diode 肖克萊二極管Schottky 肖特基Schottky barrier 肖特基勢壘Schottky contact 肖特基接觸Schrodingen 薛定厄Scribing grid 劃片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 選擇性Self aligned 自對準(zhǔn)的Self diffusion 自擴散Semiconductor 半導(dǎo)體Semiconductor-controlled rectifier 可控硅Sendsitivity 靈敏度Serial 串行/串聯(lián)Series inductance 串聯(lián)電感Settle time 建立時間Sheet resistance 薄層電阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪聲Shunt 分流Sidewall capacitance邊墻電容Signal 信號Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 絕緣硅Siliver whiskers 銀須Simple cubic 簡立方Single crystal 單晶Sink 沉Skin effect 趨膚效應(yīng)Snap time 急變時間Sneak path 潛行通路Sulethreshold 亞閾的Solar battery/cell 太陽能電池Solid circuit 固體電路Solid Solubility 固溶度Sonband 子帶Source 源極Source follower 源隨器Space charge 空間電荷Specific heat(PT) 熱Speed-power product 速度功耗乘積Spherical 球面的Spin 自旋 Split 分裂Spontaneous emission 自發(fā)發(fā)射Spreading resistance擴展電阻Sputter 濺射Stacking fault 層錯Static characteristic 靜態(tài)特性Stimulated emission 受激發(fā)射Stimulated recombination 受激復(fù)合Storage time 存儲時間Stress 應(yīng)力Straggle 偏差Sublimation 升華Substrate 襯底Substitutional 替位式的Superlattice 超晶格Supply 電源Surface 表面Surge capacity 浪涌能力Subscript 下標(biāo)Switching time 開關(guān)時間Switch 開關(guān)TTailing 擴展Terminal 終端Tensor 張量 Tensorial 張量的Thermal activation 熱激發(fā)Thermal conductivity 熱導(dǎo)率Thermal equilibrium 熱平衡Thermal Oxidation 熱氧化Thermal resistance 熱阻Thermal sink 熱沉Thermal velocity 熱運動Thermoelectricpovoer 溫差電動勢率Thick-film technique 厚膜技術(shù)Thin-film hybrid IC薄膜混合集成電路Thin-Film Transistor(TFT) 薄膜晶體Threshlod 閾值Thyistor 晶閘管Transconductance 跨導(dǎo)Transfer characteristic 轉(zhuǎn)移特性Transfer electron 轉(zhuǎn)移電子Transfer function 傳輸函數(shù)Transient 瞬態(tài)的Transistor aging(stress) 晶體管老化Transit time 渡越時間Transition 躍遷Transition-metal silica 過度金屬硅化物Transition probability 躍遷幾率Transition region 過渡區(qū)Transport 輸運 Transverse 橫向的Trap 陷阱 Trapping 俘獲Trapped charge 陷阱電荷Triangle generator 三角波發(fā)生器Triboelectricity 摩擦電Trigger 觸發(fā)Trim 調(diào)配 調(diào)整Triple diffusion 三重擴散Truth table 真值表Tolerahce 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道電流Turn over 轉(zhuǎn)折Turn - off time 關(guān)斷時間UUltraviolet 紫外的Unijunction 單結(jié)的Unipolar 單極的Unit cell 原（元）胞Unity-gain frequency 單位增益頻率Unilateral-switch單向開關(guān)VVacancy 空位Vacuum 真空Valence(value) band 價帶Value band edge 價帶頂Valence bond 價鍵Vapour phase 汽相Varactor 變?nèi)莨?/p>Varistor 變阻器Vibration 振動Voltage 電壓WWafer 晶片Wave equation 波動方程Wave guide 波導(dǎo)Wave number 波數(shù)Wave-particle duality 波粒二相性Wear-out 燒毀Wire routing 布線Work function 功函數(shù)Worst-case device 最壞情況器件YYield 成品率ZZener breakdown 齊納擊穿Zone melting 區(qū)熔法
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常用半導(dǎo)體中英對照表離子注入機 ion implanterLSS理論 Lindhand Scharff and Schiott theory，又稱“林漢德-斯卡夫-斯高特理論”。溝道效應(yīng) channeling effect射程分布 range distribution深度分布 depth distribution投影射程 projected range阻止距離 stopping distance阻止本領(lǐng) stopping power標(biāo)準(zhǔn)阻止截面 standard stopping cross section
退火 annealing激活能 activation energy等溫退火 isothermal annealing激光退火 laser annealing應(yīng)力感生缺陷 stress-induced defect擇優(yōu)取向 preferred orientation制版工藝 mask-making technology
圖形畸變 pattern distortion初縮 first minification精縮 final minification母版 master mask鉻版 chromium plate干版 dry plate乳膠版 emulsion plate透明版 see-through plate高分辨率版 high resolution plate, HRP超微粒干版 plate for ultra-microminiaturization掩模 mask掩模對準(zhǔn) mask alignment對準(zhǔn)精度 alignment precision光刻膠 photoresist，又稱“光致抗蝕劑”。負(fù)性光刻膠 negative photoresist正性光刻膠 positive photoresist無機光刻膠 inorganic resist多層光刻膠 multilevel resist電子束光刻膠 electron beam resist
X射線光刻膠 X-ray resist刷洗 scrubbing甩膠 spinning涂膠 photoresist coating后烘 postbaking光刻 photolithographyX射線光刻 X-ray lithography電子束光刻 electron beam lithography
離子束光刻 ion beam lithography深紫外光刻 deep-UV lithography光刻機 mask aligner投影光刻機 projection mask aligner曝光 exposure
接觸式曝光法 contact exposure method接近式曝光法 proximity exposure method光學(xué)投影曝光法 optical projection exposure method電子束曝光系統(tǒng) electron beam exposure system分步重復(fù)系統(tǒng) step-and-repeat system
顯影 development線寬 linewidth去膠 stripping of photoresist氧化去膠 removing of photoresist by oxidation等離子［體］去膠 removing of photoresist by plasma
刻蝕 etching干法刻蝕 dry etching反應(yīng)離子刻蝕 reactive ion etching, RIE各向同性刻蝕 isotropic etching各向異性刻蝕 anisotropic etching反應(yīng)濺射刻蝕 reactive sputter etching離子銑 ion beam milling，又稱“離子磨削”。等離子［體］刻蝕 plasma etching
鉆蝕 undercutting剝離技術(shù) lift-off technology，又稱“浮脫工藝”。終點監(jiān)測 endpoint monitoring金屬化 metallization互連 interconnection多層金屬化 multilevel metallization
電遷徙 electromigration回流 reflow磷硅玻璃 phosphorosilicate glass硼磷硅玻璃 boron-phosphorosilicate glass鈍化工藝 passivation technology多層介質(zhì)鈍化 multilayer dielectric passivation
劃片 scribing電子束切片 electron beam slicing燒結(jié) sintering印壓 indentation熱壓焊 thermocompression bonding熱超聲焊 thermosonic bonding
冷焊 cold welding點焊 spot welding球焊 ball bonding楔焊 wedge bonding內(nèi)引線焊接 inner lead bonding外引線焊接 outer lead bonding
梁式引線 beam lead裝架工藝 mounting technology附著 adhesion封裝 packaging金屬封裝 metallic packaging陶瓷封裝 ceramic packaging
扁平封裝 flat packaging塑封 plastic package玻璃封裝 glass packaging微封裝 micropackaging，又稱“微組裝”。
管殼 package管芯 die引線鍵合 lead bonding引線框式鍵合 lead frame bonding帶式自動鍵合 tape automated bonding, TAB
激光鍵合 laser bonding超聲鍵合 ultrasonic bonding紅外鍵合 infrared bonding
EDA365電子論壇微電子辭典大集合（按首字母順序排序）AAbrupt junction 突變結(jié)Accelerated testing 加速實驗Acceptor 受主Acceptor atom 受主原子Accumulation 積累、堆積Accumulating contact 積累接觸Accumulation region 積累區(qū)Accumulation layer 積累層Active region 有源區(qū)Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）區(qū)Admittance 導(dǎo)納Allowed band 允帶Alloy-junction device合金結(jié)器件Aluminum(Aluminium) 鋁Aluminum – oxide 鋁氧化物Aluminum passivation 鋁鈍化Ambipolar 雙極的Ambient temperature 環(huán)境溫度Amorphous 無定形的，非晶體的Amplifier 功放 擴音器 放大器Analogue(Analog) comparator 模擬比較器Angstrom 埃Anneal 退火Anisotropic 各向異性的Anode 陽極Arsenic (AS) 砷Auger 俄歇Auger process 俄歇過程Avalanche 雪崩Avalanche breakdown 雪崩擊穿Avalanche excitation雪崩激發(fā)BBackground carrier 本底載流子Background doping 本底摻雜Backward 反向Backward bias 反向偏置Ballasting resistor 整流電阻Ball bond 球形鍵合Band 能帶Band gap 能帶間隙Barrier 勢壘Barrier layer 勢壘層Barrier width 勢壘寬度base 基極base contact 基區(qū)接觸base stretching 基區(qū)擴展效應(yīng)base transit time 基區(qū)渡越時間base transport efficiency基區(qū)輸運系數(shù)base-width modulation基區(qū)寬度調(diào)制Basis vector 基矢Bias 偏置Bilateral switch 雙向開關(guān)Binary code 二進制代碼Binary compound semiconductor 二元化合物半導(dǎo)體Bipolar 雙極性的Bipolar Junction Transistor (BJT)雙極晶體管Bloch 布洛赫Blocking band 阻擋能帶Blocking contact 阻擋接觸Body - centered 體心立方Body-centred cubic structure 體立心結(jié)構(gòu)Boltzmann 波爾茲曼Bond 鍵、鍵合Bonding electron 價電子Bonding pad 鍵合點Bootstrap circuit 自舉電路Bootstrapped emitter follower 自舉射極跟隨器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 邊界條件Bound electron 束縛電子Breadboard 模擬板、實驗板Break down 擊穿Break over 轉(zhuǎn)折Brillouin 布里淵Brillouin zone 布里淵區(qū)Built-in 內(nèi)建的Build-in electric field 內(nèi)建電場Bulk 體/體內(nèi)Bulk absorption 體吸收Bulk generation 體產(chǎn)生Bulk recombination 體復(fù)合Burn - in 老化Burn out 燒毀Buried channel 埋溝Buried diffusion region 隱埋擴散區(qū)CCan 外殼Capacitance 電容Capture cross section 俘獲截面Capture carrier 俘獲載流子Carrier 載流子、載波Carry bit 進位位Carry-in bit 進位輸入Carry-out bit 進位輸出Cascade 級聯(lián)Case 管殼Cathode 陰極Center 中心Ceramic 陶瓷（的）Channel 溝道Channel breakdown 溝道擊穿Channel current 溝道電流Channel doping 溝道摻雜Channel shortening 溝道縮短Channel width 溝道寬度Characteristic impedance 特征阻抗Charge 電荷、充電Charge-compensation effects 電荷補償效應(yīng)Charge conservation 電荷守恒Charge neutrality condition 電中性條件Charge drive/exchange/sharing/transfer/storage 電荷驅(qū)動/交換/共享/轉(zhuǎn)移/存儲Chemmical etching 化學(xué)腐蝕法Chemically-Polish 化學(xué)拋光Chemmically-Mechanically Polish (CMP) 化學(xué)機械拋光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二極管Cleavage plane 解理面Clock rate 時鐘頻率Clock generator 時鐘發(fā)生器Clock flip-flop 時鐘觸發(fā)器Close-packed structure 密堆積結(jié)構(gòu)Close-loop gain 閉環(huán)增益Collector 集電極Collision 碰撞Compensated OP-AMP 補償運放Common-base/collector/emitter connection 共基極/集電極/發(fā)射極連接Common-gate/drain/source connection 共柵/漏/源連接Common-mode gain 共模增益Common-mode input 共模輸入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 補償Compensated impurities 補償雜質(zhì)Compensated semiconductor 補償半導(dǎo)體Complementary Darlington circuit 互補達林頓電路Complementary metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互補金屬氧化物半導(dǎo)體場效應(yīng)晶體管Complementary error function 余誤差函數(shù)Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 計算機輔助設(shè)計/ 測試 /制造Compound Semiconductor 化合物半導(dǎo)體Conductance 電導(dǎo)Conduction band (edge) 導(dǎo)帶(底)Conduction level/state 導(dǎo)帶態(tài)Conductor 導(dǎo)體Conductivity 電導(dǎo)率Configuration 組態(tài)Conlomb 庫侖Conpled Configuration Devices 結(jié)構(gòu)組態(tài)Constants 物理常數(shù)Constant energy surface 等能面Constant-source diffusion恒定源擴散Contact 接觸Contamination 治污Continuity equation 連續(xù)性方程Contact hole 接觸孔Contact potential 接觸電勢Continuity condition 連續(xù)性條件Contra doping 反摻雜Controlled 受控的Converter 轉(zhuǎn)換器Conveyer 傳輸器Copper interconnection system 銅互連系統(tǒng)Couping 耦合Covalent 共階的Crossover 跨交Critical 臨界的Crossunder 穿交Crucible坩堝Crystal defect/face/orientation/lattice 晶體缺陷/晶面/晶向/晶格Current density 電流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 電流漂移/驅(qū)動/共享Current Sense 電流取樣Curvature 彎曲Custom integrated circuit 定制集成電路Cylindrical 柱面的Czochralshicrystal 直立單晶Czochralski technique 切克勞斯基技術(shù)（Cz法直拉晶體J）DDangling bonds 懸掛鍵Dark current 暗電流Dead time 空載時間Debye length 德拜長度De.broglie 德布洛意Decderate 減速Decibel (dB) 分貝Decode 譯碼Deep acceptor level 深受主能級Deep donor level 深施主能級Deep impurity level 深度雜質(zhì)能級Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 簡并半導(dǎo)體Degeneracy 簡并度Degradation 退化Degree Celsius(centigrade) /Kelvin 攝氏/開氏溫度Delay 延遲 Density 密度Density of states 態(tài)密度Depletion 耗盡Depletion approximation 耗盡近似Depletion contact 耗盡接觸Depletion depth 耗盡深度Depletion effect 耗盡效應(yīng)Depletion layer 耗盡層Depletion MOS 耗盡MOSDepletion region 耗盡區(qū)Deposited film 淀積薄膜Deposition process 淀積工藝Design rules 設(shè)計規(guī)則Die 芯片（復(fù)數(shù)dice）Diode 二極管Dielectric 介電的Dielectric isolation 介質(zhì)隔離Difference-mode input 差模輸入Differential amplifier 差分放大器Differential capacitance 微分電容Diffused junction 擴散結(jié)Diffusion 擴散Diffusion coefficient 擴散系數(shù)Diffusion constant 擴散常數(shù)Diffusivity 擴散率Diffusion capacitance/barrier/current/furnace 擴散電容/勢壘/電流/爐Digital circuit 數(shù)字電路Dipole domain 偶極疇Dipole layer 偶極層Direct-coupling 直接耦合Direct-gap semiconductor 直接帶隙半導(dǎo)體Direct transition 直接躍遷Discharge 放電Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布電容Distributed model 分布模型Displacement 位移Dislocation 位錯Domain 疇 Donor 施主Donor exhaustion 施主耗盡Dopant 摻雜劑Doped semiconductor 摻雜半導(dǎo)體Doping concentration 摻雜濃度Double-diffusive MOS(DMOS)雙擴散MOS.Drift 漂移Drift field 漂移電場Drift mobility 遷移率Dry etching 干法腐蝕Dry/wet oxidation 干/濕法氧化Dose 劑量Duty cycle 工作周期Dual-in-line package （DIP） 雙列直插式封裝Dynamics 動態(tài)Dynamic characteristics 動態(tài)屬性Dynamic impedance 動態(tài)阻抗EEarly effect 厄利效應(yīng)Early failure 早期失效Effective mass 有效質(zhì)量Einstein relation(ship) 愛因斯坦關(guān)系Electric Erase Programmable Read only Memory(E2PROM) 一次性電可擦除只讀存儲器Electrode 電極Electrominggratim 電遷移Electron affinity 電子親和勢Electronic -grade 電子能Electron-beam photo-resist exposure 光致抗蝕劑的電子束曝光Electron gas 電子氣Electron-grade water 電子級純水Electron trapping center 電子俘獲中心Electron Volt (eV) 電子伏Electrostatic 靜電的Element 元素/元件/配件Elemental semiconductor 元素半導(dǎo)體Ellipse 橢圓Ellipsoid 橢球Emitter 發(fā)射極Emitter-coupled logic 發(fā)射極耦合邏輯Emitter-coupled pair 發(fā)射極耦合對Emitter follower 射隨器Empty band 空帶Emitter crowding effect 發(fā)射極集邊（擁擠）效應(yīng)Endurance test =life test 壽命測試Energy state 能態(tài)Energy momentum diagram 能量-動量(E-K)圖Enhancement mode 增強型模式Enhancement MOS 增強性MOS Entefic (低)共溶的Environmental test 環(huán)境測試Epitaxial 外延的Epitaxial layer 外延層Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效電路Equilibrium majority /minority carriers 平衡多數(shù)/少數(shù)載流子Erasable Programmable ROM (EPROM)可搽?。ň幊蹋┐鎯ζ?/p>Error function complement 余誤差函數(shù)Etch 刻蝕Etchant 刻蝕劑Etching mask 抗蝕劑掩模Excess carrier 過剩載流子Excitation energy 激發(fā)能Excited state 激發(fā)態(tài)Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 雜質(zhì)半導(dǎo)體FFace - centered 面心立方Fall time 下降時間Fan-in 扇入Fan-out 扇出Fast recovery 快恢復(fù)Fast surface states 快界面態(tài)Feedback 反饋Fermi level 費米能級Fermi-Dirac Distribution 費米-狄拉克分布Femi potential 費米勢Fick equation 菲克方程（擴散）Field effect transistor 場效應(yīng)晶體管Field oxide 場氧化層Filled band 滿帶Film 薄膜Flash memory 閃爍存儲器Flat band 平帶Flat pack 扁平封裝Flicker noise 閃爍（變）噪聲Flip-flop toggle 觸發(fā)器翻轉(zhuǎn)Floating gate 浮柵Fluoride etch 氟化氫刻蝕Forbidden band 禁帶Forward bias 正向偏置Forward blocking /conducting正向阻斷/導(dǎo)通Frequency deviation noise頻率漂移噪聲Frequency response 頻率響應(yīng)Function 函數(shù)GGain 增益Gallium-Arsenide(GaAs) 砷化鉀Gamy ray r 射線Gate 門、柵、控制極Gate oxide 柵氧化層Gauss（ian） 高斯Gaussian distribution profile 高斯摻雜分布Generation-recombination 產(chǎn)生-復(fù)合Geometries 幾何尺寸Germanium(Ge) 鍺Graded 緩變的Graded (gradual) channel 緩變溝道Graded junction 緩變結(jié)Grain 晶粒Gradient 梯度Grown junction 生長結(jié)Guard ring 保護環(huán)Gummel-Poom model 葛謀-潘 模型Gunn - effect 狄氏效應(yīng)HHardened device 輻射加固器件Heat of formation 形成熱Heat sink 散熱器、熱沉Heavy/light hole band 重/輕 空穴帶Heavy saturation 重?fù)诫sHell - effect 霍爾效應(yīng)Heterojunction 異質(zhì)結(jié)Heterojunction structure 異質(zhì)結(jié)結(jié)構(gòu)Heterojunction Bipolar Transistor（HBT）異質(zhì)結(jié)雙極型晶體High field property 高場特性High-performance MOS.( H-MOS)高性能MOS. Hormalized 歸一化Horizontal epitaxial reactor 臥式外延反應(yīng)器Hot carrior 熱載流子Hybrid integration 混合集成IImage - force 鏡象力Impact ionization 碰撞電離Impedance 阻抗Imperfect structure 不完整結(jié)構(gòu)Implantation dose 注入劑量Implanted ion 注入離子Impurity 雜質(zhì)Impurity scattering 雜志散射Incremental resistance 電阻增量（微分電阻）In-contact mask 接觸式掩模Indium tin oxide (ITO) 銦錫氧化物Induced channel 感應(yīng)溝道Infrared 紅外的Injection 注入Input offset voltage 輸入失調(diào)電壓Insulator 絕緣體Insulated Gate FET(IGFET)絕緣柵FETIntegrated injection logic集成注入邏輯Integration 集成、積分Interconnection 互連Interconnection time delay 互連延時Interdigitated structure 交互式結(jié)構(gòu)Interface 界面Interference 干涉International system of unions國際單位制Internally scattering 谷間散射Interpolation 內(nèi)插法Intrinsic 本征的Intrinsic semiconductor 本征半導(dǎo)體Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 離子Ion beam 離子束Ion etching 離子刻蝕Ion implantation 離子注入Ionization 電離Ionization energy 電離能Irradiation 輻照Isolation land 隔離島Isotropic 各向同性JJunction FET(JFET) 結(jié)型場效應(yīng)管Junction isolation 結(jié)隔離Junction spacing 結(jié)間距Junction side-wall 結(jié)側(cè)壁LLatch up 閉鎖Lateral 橫向的Lattice 晶格Layout 版圖Lattice binding/cell/constant/defect/distortion 晶格結(jié)合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸變Leakage current （泄）漏電流Level shifting 電平移動Life time 壽命linearity 線性度linked bond 共價鍵Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生長技術(shù)Lithography 光刻Light Emitting Diode(LED) 發(fā)光二極管Load line or Variable 負(fù)載線Locating and Wiring 布局布線Longitudinal 縱向的Logic swing 邏輯擺幅Lorentz 洛淪茲Lumped model 集總模型MMajority carrier 多數(shù)載流子Mask 掩膜板，光刻板Mask level 掩模序號Mask set 掩模組Mass - action law質(zhì)量守恒定律Master-slave D flip-flop主從D觸發(fā)器Matching 匹配Maxwell 麥克斯韋Mean free path 平均自由程Meandered emitter junction梳狀發(fā)射極結(jié)Mean time before failure (MTBF) 平均工作時間Megeto - resistance 磁阻Mesa 臺面MESFET-metal Semiconductor金屬半導(dǎo)體FETmetallization 金屬化Microelectronic technique 微電子技術(shù)Microelectronics 微電子學(xué)Millen indices 密勒指數(shù)Minority carrier 少數(shù)載流子Misfit 失配Mismatching 失配Mobile ions 可動離子Mobility 遷移率Module 模塊Modulate 調(diào)制Molecular crystal分子晶體Monolithic IC 單片ICMOSFET金屬氧化物半導(dǎo)體場效應(yīng)晶體管Mos. Transistor(MOST )MOS. 晶體管Multiplication 倍增Modulator 調(diào)制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模塊Multiplication coefficient倍增因子NNaked chip 未封裝的芯片（裸片）Negative feedback 負(fù)反饋Negative resistance 負(fù)阻Nesting 套刻Negative-temperature-coefficient 負(fù)溫度系數(shù)Noise margin 噪聲容限Nonequilibrium 非平衡Nonrolatile 非揮發(fā)（易失）性Normally off/on 常閉/開Numerical analysis 數(shù)值分析OOccupied band 滿帶Officienay 功率Offset 偏移、失調(diào)On standby 待命狀態(tài)Ohmic contact 歐姆接觸Open circuit 開路Operating point 工作點Operating bias 工作偏置Operational amplifier (OPAMP)運算放大器Optical photon =photon 光子Optical quenching光猝滅Optical transition 光躍遷Optical-coupled isolator光耦合隔離器Organic semiconductor有機半導(dǎo)體Orientation 晶向、定向Outline 外形Out-of-contact mask非接觸式掩模Output characteristic 輸出特性Output voltage swing 輸出電壓擺幅Overcompensation 過補償Over-current protection 過流保護Over shoot 過沖Over-voltage protection 過壓保護Overlap 交迭Overload 過載Oscillator 振蕩器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化層鈍化PPackage 封裝Pad 壓焊點Parameter 參數(shù)Parasitic effect 寄生效應(yīng)Parasitic oscillation 寄生振蕩Passination 鈍化Passive component 無源元件Passive device 無源器件Passive surface 鈍化界面Parasitic transistor 寄生晶體管Peak-point voltage 峰點電壓Peak voltage 峰值電壓Permanent-storage circuit 永久存儲電路Period 周期Periodic table 周期表Permeable - base 可滲透基區(qū)Phase-lock loop 鎖相環(huán)Phase drift 相移Phonon spectra 聲子譜Photo conduction 光電導(dǎo)Photo diode 光電二極管Photoelectric cell 光電池Photoelectric effect 光電效應(yīng)Photoenic devices 光子器件Photolithographic process 光刻工藝(photo) resist （光敏）抗腐蝕劑Pin 管腳Pinch off 夾斷Pinning of Fermi level 費米能級的釘扎（效應(yīng)）Planar process 平面工藝Planar transistor 平面晶體管Plasma 等離子體Plezoelectric effect 壓電效應(yīng)Poisson equation 泊松方程Point contact 點接觸Polarity 極性Polycrystal 多晶Polymer semiconductor聚合物半導(dǎo)體Poly-silicon 多晶硅Potential (電)勢Potential barrier 勢壘Potential well 勢阱Power dissipation 功耗Power transistor 功率晶體管Preamplifier 前置放大器Primary flat 主平面Principal axes 主軸Print-circuit board(PCB) 印制電路板Probability 幾率Probe 探針Process 工藝Propagation delay 傳輸延時Pseudopotential method 膺勢發(fā)Punch through 穿通Pulse triggering/modulating 脈沖觸發(fā)/調(diào)制Pulse Widen Modulator(PWM) 脈沖寬度調(diào)制Punchthrough 穿通Push-pull stage 推挽級QQuality factor 品質(zhì)因子Quantization 量子化Quantum 量子Quantum efficiency量子效應(yīng)Quantum mechanics 量子力學(xué)Quasi – Fermi－level準(zhǔn)費米能級Quartz 石英RRadiation conductivity 輻射電導(dǎo)率Radiation damage 輻射損傷Radiation flux density 輻射通量密度Radiation hardening 輻射加固Radiation protection 輻射保護Radiative - recombination輻照復(fù)合Radioactive 放射性Reach through 穿通Reactive sputtering source 反應(yīng)濺射源Read diode 里德二極管Recombination 復(fù)合Recovery diode 恢復(fù)二極管Reciprocal lattice 倒核子Recovery time 恢復(fù)時間Rectifier 整流器（管）Rectifying contact 整流接觸Reference 基準(zhǔn)點 基準(zhǔn) 參考點Refractive index 折射率Register 寄存器Registration 對準(zhǔn)Regulate 控制 調(diào)整Relaxation lifetime 馳豫時間Reliability 可靠性Resonance 諧振Resistance 電阻Resistor 電阻器Resistivity 電阻率Regulator 穩(wěn)壓管（器）Relaxation 馳豫Resonant frequency共射頻率Response time 響應(yīng)時間Reverse 反向的Reverse bias 反向偏置SSampling circuit 取樣電路Sapphire 藍(lán)寶石（Al2O3）Satellite valley 衛(wèi)星谷Saturated current range電流飽和區(qū)Saturation region 飽和區(qū)Saturation 飽和的Scaled down 按比例縮小Scattering 散射Schockley diode 肖克萊二極管Schottky 肖特基Schottky barrier 肖特基勢壘Schottky contact 肖特基接觸Schrodingen 薛定厄Scribing grid 劃片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 選擇性Self aligned 自對準(zhǔn)的Self diffusion 自擴散Semiconductor 半導(dǎo)體Semiconductor-controlled rectifier 可控硅Sendsitivity 靈敏度Serial 串行/串聯(lián)Series inductance 串聯(lián)電感Settle time 建立時間Sheet resistance 薄層電阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪聲Shunt 分流Sidewall capacitance邊墻電容Signal 信號Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 絕緣硅Siliver whiskers 銀須Simple cubic 簡立方Single crystal 單晶Sink 沉Skin effect 趨膚效應(yīng)Snap time 急變時間Sneak path 潛行通路Sulethreshold 亞閾的Solar battery/cell 太陽能電池Solid circuit 固體電路Solid Solubility 固溶度Sonband 子帶Source 源極Source follower 源隨器Space charge 空間電荷Specific heat(PT) 熱Speed-power product 速度功耗乘積Spherical 球面的Spin 自旋 Split 分裂Spontaneous emission 自發(fā)發(fā)射Spreading resistance擴展電阻Sputter 濺射Stacking fault 層錯Static characteristic 靜態(tài)特性Stimulated emission 受激發(fā)射Stimulated recombination 受激復(fù)合Storage time 存儲時間Stress 應(yīng)力Straggle 偏差Sublimation 升華Substrate 襯底Substitutional 替位式的Superlattice 超晶格Supply 電源Surface 表面Surge capacity 浪涌能力Subscript 下標(biāo)Switching time 開關(guān)時間Switch 開關(guān)TTailing 擴展Terminal 終端Tensor 張量 Tensorial 張量的Thermal activation 熱激發(fā)Thermal conductivity 熱導(dǎo)率Thermal equilibrium 熱平衡Thermal Oxidation 熱氧化Thermal resistance 熱阻Thermal sink 熱沉Thermal velocity 熱運動Thermoelectricpovoer 溫差電動勢率Thick-film technique 厚膜技術(shù)Thin-film hybrid IC薄膜混合集成電路Thin-Film Transistor(TFT) 薄膜晶體Threshlod 閾值Thyistor 晶閘管Transconductance 跨導(dǎo)Transfer characteristic 轉(zhuǎn)移特性Transfer electron 轉(zhuǎn)移電子Transfer function 傳輸函數(shù)Transient 瞬態(tài)的Transistor aging(stress) 晶體管老化Transit time 渡越時間Transition 躍遷Transition-metal silica 過度金屬硅化物Transition probability 躍遷幾率Transition region 過渡區(qū)Transport 輸運 Transverse 橫向的Trap 陷阱 Trapping 俘獲Trapped charge 陷阱電荷Triangle generator 三角波發(fā)生器Triboelectricity 摩擦電Trigger 觸發(fā)Trim 調(diào)配 調(diào)整Triple diffusion 三重擴散Truth table 真值表Tolerahce 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道電流Turn over 轉(zhuǎn)折Turn - off time 關(guān)斷時間UUltraviolet 紫外的Unijunction 單結(jié)的Unipolar 單極的Unit cell 原（元）胞Unity-gain frequency 單位增益頻率Unilateral-switch單向開關(guān)VVacancy 空位Vacuum 真空Valence(value) band 價帶Value band edge 價帶頂Valence bond 價鍵Vapour phase 汽相Varactor 變?nèi)莨?/p>Varistor 變阻器Vibration 振動Voltage 電壓WWafer 晶片Wave equation 波動方程Wave guide 波導(dǎo)Wave number 波數(shù)Wave-particle duality 波粒二相性Wear-out 燒毀Wire routing 布線Work function 功函數(shù)Worst-case device 最壞情況器件YYield 成品率ZZener breakdown 齊納擊穿Zone melting 區(qū)熔法聲明：文章來源于網(wǎng)絡(luò)，版權(quán)歸原作者所有。如有侵權(quán)，請聯(lián)系刪除。
